FDS2070N7
MOSFET N-CH 150V 4.1A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor PowerTrench® N-Channel MOSFET, FDS2070N7. This device offers a 150V Drain-to-Source voltage (Vdss) and a continuous drain current of 4.1A at 25°C (Ta), with a maximum power dissipation of 3W (Ta). The MOSFET features a low Rds(on) of 78mOhm at 4.1A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 53 nC at 10V and Input Capacitance (Ciss) of 1884 pF at 75V. It is designed for surface mount applications in an 8-SOIC package. The operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in power supply, motor control, and industrial automation applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1884 pF @ 75 V |
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