FDS2070N3
MOSFET N-CH 150V 4.1A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's PowerTrench® series FDS2070N3 is an N-Channel MOSFET featuring a 150V Drain-Source Voltage (Vdss) and a continuous drain current capability of 4.1A (Ta) at 25°C. This component is housed in an 8-SOIC package with a 3W maximum power dissipation (Ta). Key electrical characteristics include a maximum ON-resistance (Rds On) of 78mOhm at 4.1A and 10V Vgs, and a maximum input capacitance (Ciss) of 1884pF at 75V Vds. The gate charge (Qg) is specified at 53nC maximum at 10V Vgs. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for applications in power management and switching circuits across various industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1884 pF @ 75 V |
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