FDPF7N50F
MOSFET N-CH 500V 6A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's UniFET™ series FDPF7N50F is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) capability of 6A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 1.15 Ohms at 3A and 10V gate drive. Key parameters include a gate charge (Qg) of 20 nC (max) at 10V and input capacitance (Ciss) of 960 pF (max) at 25V. With a maximum power dissipation of 38.5W (Tc), this MOSFET is housed in a TO-220F-3 package suitable for through-hole mounting. The FDPF7N50F is utilized across various industries, including power supplies, industrial automation, and lighting.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD18N20LZ
MOSFET N-CH 200V 16A DPAK
FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
FDPF51N25
MOSFET N-CH 250V 51A TO220F
