FDPF7N50
MOSFET N-CH 500V 7A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDPF7N50 is a UniFET™ series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 7 A at 25°C (Tc). With a low on-resistance (Rds On) of 900 mOhm at 3.5 A and 10 V gate-source voltage, it minimizes conduction losses. The device offers a gate charge (Qg) of 16.6 nC at 10 V and an input capacitance (Ciss) of 940 pF at 25 V. Packaged in a TO-220F-3 through-hole configuration, it dissipates up to 39 W (Tc). This MOSFET is suitable for use in power supplies, lighting, and motor control systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V |
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