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FDPF7N50

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FDPF7N50

MOSFET N-CH 500V 7A TO220F

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDPF7N50 is a UniFET™ series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 7 A at 25°C (Tc). With a low on-resistance (Rds On) of 900 mOhm at 3.5 A and 10 V gate-source voltage, it minimizes conduction losses. The device offers a gate charge (Qg) of 16.6 nC at 10 V and an input capacitance (Ciss) of 940 pF at 25 V. Packaged in a TO-220F-3 through-hole configuration, it dissipates up to 39 W (Tc). This MOSFET is suitable for use in power supplies, lighting, and motor control systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.

Additional Information

Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)39W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 25 V

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