FDPF6N60ZUT
MOSFET N-CH 600V 4.5A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UniFET™ N-Channel Power MOSFET, FDPF6N60ZUT. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The Rds(on) is a maximum of 2 Ohms at 2.25A, 10V drive. With a gate charge (Qg) of 20 nC maximum at 10V and input capacitance (Ciss) of 865 pF maximum at 25V, it offers efficient switching characteristics. The device is packaged in a TO-220F-3 through-hole configuration and supports a maximum power dissipation of 33.8W. Suitable for applications in power supplies, lighting, and motor control.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33.8W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 25 V |
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