FDPF5N50TYDTU
MOSFET N-CH 500V 5A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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The Fairchild Semiconductor UniFET™ series FDPF5N50TYDTU is an N-Channel Power MOSFET with a Drain-Source voltage rating of 500V. This component offers a continuous drain current of 5A at 25°C (Tc) and a maximum power dissipation of 28W (Tc). Key electrical characteristics include a maximum Rds(on) of 1.4 Ohm at 2.5A and 10V, and a gate charge (Qg) of 15 nC at 10V. Input capacitance (Ciss) is specified at 640 pF maximum at 25V. The device features a TO-220F (LG-Formed) package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in applications such as power factor correction (PFC) and switch mode power supplies (SMPS).
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F (LG-Formed) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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