FDPF12N35
MOSFET N-CH 350V 12A TO220FManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UniFET™ N-Channel Power MOSFET, part number FDPF12N35. This device features a drain-to-source voltage (Vdss) of 350V and a continuous drain current (Id) of 12A at 25°C. The Rds On is specified at a maximum of 380mOhm at 6A and 10V gate drive. With a gate charge (Qg) of 25 nC and input capacitance (Ciss) of 1110 pF, it offers efficient switching characteristics. The component is housed in a TO-220F-3 package for through-hole mounting and has a maximum power dissipation of 31.3W. Typical applications include power supply units, lighting, and industrial motor control systems.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31.3W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 350 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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