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FDP8443

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FDP8443

MOSFET N-CH 40V 20A/80A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDP8443 is a high-performance N-Channel PowerTrench® MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current capability of 20A at ambient temperature (Ta) and 80A at case temperature (Tc). With a maximum power dissipation of 188W (Tc), it is suitable for high-power switching and power management tasks. The device features a low on-resistance of 3.5mOhm at 80A and 10V, minimizing conduction losses. Its TO-220-3 through-hole package facilitates robust mounting and thermal management. Key electrical parameters include a gate charge (Qg) of 185 nC at 10V and input capacitance (Ciss) of 9310 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), the FDP8443 finds application in power supplies, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9310 pF @ 25 V

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