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FDP8442

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FDP8442

MOSFET N-CH 40V 23A/80A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDP8442 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current capability of 23A at 25°C ambient temperature, scaling up to 80A under continuous drain conditions at case temperature (Tc). With a maximum power dissipation of 254W at Tc and a low on-resistance of 3.1mOhm at 80A and 10V gate drive, it ensures minimal conduction losses. The device exhibits a gate charge (Qg) of 235nC at 10V and an input capacitance (Ciss) of 12200pF at 25V, critical parameters for switching performance. The FDP8442 utilizes through-hole mounting in a standard TO-220-3 package, operating across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for demanding applications in power supplies, automotive systems, and industrial motor control.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs3.1mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)254W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12200 pF @ 25 V

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