FDP79N15
MOSFET N-CH 150V 79A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UniFET™ N-Channel Power MOSFET, part number FDP79N15, is a TO-220-3 packaged device featuring a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 79A at 25°C. This MOSFET offers a low on-resistance of 30mOhm maximum at 39.5A and 10V gate-source voltage, with a gate charge (Qg) of 73nC maximum at 10V. The input capacitance (Ciss) is 3410pF maximum at 25V. Designed for through-hole mounting, the FDP79N15 has a maximum power dissipation of 463W at the case temperature and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial and power supply applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 39.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 463W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 25 V |
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