FDP6030BL
POWER FIELD-EFFECT TRANSISTOR, 4Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FDP6030BL is an N-Channel Power MOSFET from the PowerTrench® series. This through-hole component, housed in a TO-220-3 package, features a Drain-to-Source voltage (Vdss) of 30V and a continuous drain current (Id) of 40A at 25°C. It offers a low on-resistance (Rds On) of 18mOhm at 20A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. The device supports a gate-source voltage (Vgs) range of ±20V and requires a drive voltage between 4.5V and 10V. Key parameters include a maximum power dissipation of 60W (Tc) and a gate charge (Qg) of 17 nC at 5V. Input capacitance (Ciss) is rated at a maximum of 1160 pF at 15V. This MOSFET is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
