FDP5645
MOSFET N-CH 60V 80A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDP5645 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This through-hole component features a 60 V drain-source voltage and a continuous drain current of 80 A at 25°C (Ta), with a maximum power dissipation of 125 W (Tc). Key electrical characteristics include a low on-resistance of 9.5 mOhm at 40 A and 10 V, and a gate charge of 107 nC at 10 V. The input capacitance (Ciss) is rated at 4468 pF at 30 V. With a wide operating temperature range of -65°C to 175°C (TJ) and a maximum gate-source voltage of ±20 V, the FDP5645 is suitable for power supply, motor control, and industrial automation systems. It is supplied in a TO-220-3 package.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4468 pF @ 30 V |
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