FDP2670
MOSFET N-CH 200V 19A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDP2670 is a N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 19A at 25°C. The Rds On is specified at a maximum of 130mOhm at 10A and 10V of gate drive. Key parameters include a Gate Charge (Qg) of 38 nC maximum at 10V and an Input Capacitance (Ciss) of 1320 pF maximum at 100V. With a maximum power dissipation of 93W at 25°C (Tc), it is housed in a standard TO-220-3 package suitable for through-hole mounting. This MOSFET is utilized across various power electronics industries, including industrial automation and power supplies.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 100 V |
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