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FDP14AN06LA0

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FDP14AN06LA0

MOSFET N-CH 60V 10A/67A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDP14AN06LA0 is an N-channel PowerTrench® MOSFET designed for demanding power applications. This component features a 60V Drain-Source Voltage (Vdss) and offers a continuous drain current of 10A at 25°C ambient and 67A under typical case conditions. With a maximum power dissipation of 125W (Tc), it is suitable for applications requiring efficient power handling. The Rds On is specified at a maximum of 11.6mOhm at 67A and 10V. Key electrical characteristics include a Gate Charge (Qg) of 31 nC (Max) at 5V and Input Capacitance (Ciss) of 2900 pF (Max) at 25V. The device supports drive voltages ranging from 5V to 10V for optimal on-resistance. This through-hole mounted TO-220-3 packaged MOSFET operates across a temperature range of -55°C to 175°C. Its robust design makes it valuable in industrial, automotive, and power supply sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs11.6mOhm @ 67A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2900 pF @ 25 V

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