FDP120AN15A0
MOSFET N-CH 150V 2.8A/14A TO220Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDP120AN15A0 is an N-Channel PowerTrench® MOSFET. This component offers a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 2.8A at ambient temperature (Ta) and 14A at case temperature (Tc). The device features a maximum power dissipation of 65W (Tc) and a low on-resistance (Rds On) of 120mOhm at 4A and 10V. Key parameters include a gate charge (Qg) of 14.5 nC maximum at 10V and input capacitance (Ciss) of 770 pF maximum at 25V. The FDP120AN15A0 is housed in a TO-220-3 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 175°C. This MOSFET is utilized in applications such as power management and industrial power supplies.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta), 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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