FDP10AN06A0
MOSFET N-CH 60V 12A/75A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor PowerTrench® FDP10AN06A0 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 60 V and offers a continuous drain current (Id) of 12A at 25°C ambient and 75A at 25°C case temperature. With a maximum power dissipation of 135W (Tc) and a low on-resistance (Rds On) of 10.5mOhm at 75A and 10V, it ensures minimal conduction losses. The FDP10AN06A0 utilizes advanced PowerTrench® technology for improved performance characteristics, including a typical gate charge (Qg) of 37 nC at 10V and input capacitance (Ciss) of 1840 pF at 25V. Packaged in a TO-220-3 through-hole configuration, it operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for use in industrial, automotive, and telecommunications power management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840 pF @ 25 V |
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