FDP040N06
MOSFET N-CH 60V 120A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDP040N06 is a PowerTrench® series N-Channel MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 120 A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 4 mOhm at 75 A and 10 V, contributing to efficient power handling with a maximum power dissipation of 231 W (Tc). The TO-220-3 package facilitates through-hole mounting. Key electrical characteristics include a Gate Charge (Qg) of 133 nC at 10 V and input capacitance (Ciss) of 8235 pF at 25 V. This MOSFET is suitable for demanding applications within the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8235 pF @ 25 V |
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