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FDMS8690

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FDMS8690

MOSFET N-CH 30V 14A/27A 8MLP

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDMS8690 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 14A at ambient temperature (Ta) and 27A at case temperature (Tc). With a low on-resistance (Rds On) of 9mOhm at 14A and 10V Vgs, it ensures efficient power transfer. The FDMS8690 supports a wide drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 27 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1680 pF at 15V. Packaged in an 8-MLP (5x6), Power56 (8-PowerWDFN) with surface mount compatibility, it operates across an industrial temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W (Ta) and 37.8W (Tc). This component is utilized in industries such as computing and power management.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 37.8W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-MLP (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 15 V

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