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FDMS8672S

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FDMS8672S

MOSFET N-CH 30V 17A/35A 8PQFN

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDMS8672S is a PowerTrench® N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and offers a continuous drain current of 17A at 25°C ambient temperature and 35A at 25°C case temperature. Its low on-resistance of 5mOhm at 17A and 10V gate-source voltage, achieved with a 10V gate drive, minimizes conduction losses. The FDMS8672S is packaged in an 8-PQFN (5x6) configuration for surface mounting, enabling excellent thermal performance with a maximum power dissipation of 2.5W (Ta) and 50W (Tc). Key parameters include a gate charge (Qg) of 47 nC at 10V and an input capacitance (Ciss) of 2515 pF at 15V. This MOSFET is suitable for use in applications such as power supplies, battery management systems, and motor control, commonly found in the automotive and industrial sectors. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2515 pF @ 15 V

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