FDMS8670
MOSFET N-CH 30V 24A/42A 8PQFNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FDMS8670 is an N-Channel PowerTrench® MOSFET designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current of 24A at 25°C ambient and 42A at 25°C case temperature. The Rds(On) is rated at a maximum of 2.6mOhm at 24A and 10V gate drive. With a maximum power dissipation of 78W at 25°C case temperature and 2.5W at 25°C ambient, it utilizes 10V for optimal Rds(On) performance. The 8-PQFN (5x6) package facilitates surface mount integration. Key electrical characteristics include a maximum gate charge of 63 nC at 10V and an input capacitance of 3940 pF at 15V. Operating within a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3940 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
