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FDMS8660AS

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FDMS8660AS

MOSFET N-CH 30V 28A/49A 8PQFN

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDMS8660AS, an N-Channel PowerTrench® MOSFET, offers a 30V drain-to-source breakdown voltage. This device features a maximum on-resistance of 2.1mOhm at 28A and 10V Vgs. Continuous drain current is specified at 28A ambient and 49A at case temperature. Power dissipation is rated at 2.5W ambient and 104W at case temperature. The FDMS8660AS is housed in an 8-PQFN (5x6) package, suitable for surface mounting. Key parameters include a maximum gate charge of 83 nC and input capacitance of 5865 pF. This component is utilized in applications such as power management and high-efficiency switching, commonly found in computing and industrial power supplies.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs2.1mOhm @ 28A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5865 pF @ 15 V

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