FDMS8660AS
MOSFET N-CH 30V 28A/49A 8PQFNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDMS8660AS, an N-Channel PowerTrench® MOSFET, offers a 30V drain-to-source breakdown voltage. This device features a maximum on-resistance of 2.1mOhm at 28A and 10V Vgs. Continuous drain current is specified at 28A ambient and 49A at case temperature. Power dissipation is rated at 2.5W ambient and 104W at case temperature. The FDMS8660AS is housed in an 8-PQFN (5x6) package, suitable for surface mounting. Key parameters include a maximum gate charge of 83 nC and input capacitance of 5865 pF. This component is utilized in applications such as power management and high-efficiency switching, commonly found in computing and industrial power supplies.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5865 pF @ 15 V |
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