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FDMS2508SDC

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FDMS2508SDC

MOSFET N-CH 25V 34A/49A DLCOOL56

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDMS2508SDC is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 25V drain-source breakdown voltage and supports continuous drain currents of 34A at a typical ambient temperature (Ta) and 49A at a case temperature (Tc). Optimized with Fairchild's PowerTrench® and SyncFET™ technologies, it offers low on-resistance of 1.95mOhm at 28A and 10V Vgs. The FDMS2508SDC utilizes the Dual Cool™ package, an 8-PQFN (5x6) with excellent thermal performance, dissipating up to 3.3W (Ta) and 78W (Tc). Gate drive voltages range from 4.5V to 10V, with a maximum gate charge of 69 nC at 10V. Input capacitance (Ciss) is a maximum of 4515 pF at 13V. This MOSFET is suitable for applications in computing, data centers, and industrial power supplies.

Additional Information

Series: Dual Cool™, PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs1.95mOhm @ 28A, 10V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4515 pF @ 13 V

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