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FDMS0308CS

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FDMS0308CS

MOSFET N-CH 30V 22A 8PQFN

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDMS0308CS is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 22A at 25°C ambient. The low on-resistance of 3mOhm at 21A and 10V gate-source voltage, coupled with a gate charge of 66 nC at 10V, ensures efficient switching performance. Key parameters include a maximum power dissipation of 2.5W (ambient) and 65W (case), and input capacitance (Ciss) of 4225 pF at 15V. The FDMS0308CS utilizes Surface Mount technology, housed in an 8-PQFN (5x6) package. Its operating temperature range is -55°C to 150°C. This component is suitable for use in power management, automotive, and industrial sectors. The FDMS0308CS is a robust solution for high-current, low-voltage switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Rds On (Max) @ Id, Vgs3mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-PQFN (5x6)
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4225 pF @ 15 V

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