FDMS0308CS
MOSFET N-CH 30V 22A 8PQFNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDMS0308CS is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 22A at 25°C ambient. The low on-resistance of 3mOhm at 21A and 10V gate-source voltage, coupled with a gate charge of 66 nC at 10V, ensures efficient switching performance.
Key parameters include a maximum power dissipation of 2.5W (ambient) and 65W (case), and input capacitance (Ciss) of 4225 pF at 15V. The FDMS0308CS utilizes Surface Mount technology, housed in an 8-PQFN (5x6) package. Its operating temperature range is -55°C to 150°C. This component is suitable for use in power management, automotive, and industrial sectors. The FDMS0308CS is a robust solution for high-current, low-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4225 pF @ 15 V |
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