FDMB506P
MOSFET P-CH 20V 6.8A 8MLPManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDMB506P is a P-channel PowerTrench® MOSFET designed for efficient power management. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.8A at 25°C, with a maximum RdsOn of 30mOhm at 6.8A and 4.5V Vgs. The 1.9W maximum power dissipation (Ta) is supported by the 8-MLP, MicroFET (3x1.9) package, which is ideal for surface mount applications. Key drive voltages range from 1.8V to 4.5V, with a gate charge (Qg) of 30nC at 4.5V and input capacitance (Ciss) of 2960pF at 10V. Operating temperature range is -55°C to 150°C (TJ). This component finds application in consumer electronics and industrial power systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2960 pF @ 10 V |
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