FDM606P
MOSFET P-CH 20V 6.8A 8MLPManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's PowerTrench® FDM606P is a P-Channel MOSFET designed for efficient power management. This device features a 20V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 6.8A at 25°C (Tc). The Rds On is specified at a maximum of 30mOhm at 6.8A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 30 nC at 4.5V and input capacitance (Ciss) of 2200 pF at 10V. The MOSFET is housed in an 8-MLP, MicroFET (3x2) package, facilitating surface mounting for compact designs. Its operating temperature range is -55°C to 150°C (TJ), and it offers a maximum power dissipation of 1.92W (Ta). Applications for this component can be found in portable electronics, automotive systems, and power supply circuits.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.92W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-MLP, MicroFET (3x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 10 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
