FDI8442
MOSFET N-CH 40V 23A/80A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDI8442 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This device features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 23A at 25°C ambient and 80A at 25°C case temperature. With a maximum power dissipation of 254W (Tc), it offers robust thermal performance. The FDI8442 exhibits a low on-resistance (Rds On) of 2.9mOhm at 80A and 10V drive voltage. Key parameters include a gate charge (Qg) of 235 nC at 10V and input capacitance (Ciss) of 12200 pF at 25V. The component is housed in a TO-262 (I2PAK) package with long leads, suitable for through-hole mounting. This MOSFET is utilized in industrial and automotive sectors. It operates within a temperature range of -55°C to 175°C (TJ) and has a ±20V maximum gate-source voltage (Vgs).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 254W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 25 V |
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