FDI8441
MOSFET N-CH 40V 26A/80A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDI8441 is an N-Channel Power MOSFET from the PowerTrench® series, packaged in a TO-262 (I2PAK) through-hole configuration. This device features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 26A at ambient temperature (Ta) and 80A at case temperature (Tc). With a maximum power dissipation of 300W (Tc), it is suitable for demanding applications. The on-resistance (Rds On) is specified at a maximum of 2.7mOhm at 80A and 10V gate-source voltage (Vgs). This MOSFET is designed for efficient power switching and is commonly utilized in industrial power supplies, automotive systems, and power management solutions. Key parameters include a gate charge (Qg) of 280 nC at 10V and input capacitance (Ciss) of 15000 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
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