FDI047AN08A0
MOSFET N-CH 75V 80A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDI047AN08A0 is an N-Channel Power MOSFET from the PowerTrench® series. This component features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) capability of 80 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 4.7 mOhm at 80 A and 10 V gate-source voltage. This device offers a maximum power dissipation of 310 W at 25°C. The FDI047AN08A0 utilizes a TO-262 (I2PAK) package with through-hole mounting. Key electrical parameters include a gate charge (Qg) of 138 nC at 10 V and input capacitance (Ciss) of 6600 pF at 25 V. Operating temperature range is from -55°C to 175°C. This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
