FDH5500
MOSFET N-CH 55V 75A TO247-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ FDH5500 is an N-Channel power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance of 7mOhm at 75A and 10V gate drive makes it suitable for demanding power switching tasks. Key parameters include a gate charge (Qg) of 268 nC at 20V and input capacitance (Ciss) of 3565 pF at 25V. The FDH5500 utilizes Metal Oxide technology and is housed in a TO-247-3 package, facilitating through-hole mounting. It is rated for an operating temperature range of -55°C to 175°C (TJ). This device finds application in power supply units, motor control, and other high-power switching systems.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 268 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3565 pF @ 25 V |
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