FDFS2P102A
MOSFET P-CH 20V 3.3A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDFS2P102A is a P-Channel PowerTrench® MOSFET designed for efficient power management. With a Drain-to-Source Voltage (Vdss) of 20V and continuous drain current (Id) of 3.3A at 25°C, this component features a low on-resistance (Rds On) of 125mOhm maximum at 3.3A and 10V Vgs. The device offers a maximum power dissipation of 900mW (Ta) and is housed in a compact 8-SOIC package suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 3 nC maximum at 5V Vgs and input capacitance (Ciss) of 182 pF maximum at 10V Vds. The FDFS2P102A integrates a Schottky diode for enhanced performance. This MOSFET is commonly utilized in power supply units, battery management systems, and portable electronics. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 3.3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 10 V |
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