FDFC3N108
MOSFET N-CH 20V 3A SUPERSOT6Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDFC3N108 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C. The Rds(on) is specified at a maximum of 70mOhm when driven at 3A and 4.5V Vgs. Key characteristics include a low gate charge (Qg) of 4.9 nC at 4.5V and an input capacitance (Ciss) of 355 pF at 10V Vds. The device integrates an isolated Schottky diode for enhanced performance. Mounting is facilitated by its SuperSOT™-6 package, also known as SOT-23-6 Thin or TSOT-23-6. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 10 V |
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