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FDD6778A

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FDD6778A

MOSFET N-CH 25V 12A/10A DPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDD6778A is an N-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C ambient temperature, with a continuous drain current of 10A at 25°C with a thermal resistance of 10V. The FDD6778A exhibits a low on-resistance (Rds On) of 14mOhm at 10A and 10V Vgs, minimizing conduction losses. It offers a maximum power dissipation of 3.7W (Ta) and 24W (Tc), suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 17nC (max) at 10V Vgs and an input capacitance (Ciss) of 870pF (max) at 13V Vds. The FDD6778A is packaged in a TO-252 (DPAK) surface-mount configuration, ideal for high-density board designs across various industries including consumer electronics, industrial automation, and automotive systems. It supports a wide operating temperature range from -55°C to 175°C (TJ) and a maximum gate-source voltage (Vgs) of ±20V.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Grade-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 13 V
Qualification-

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