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FDD6682

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FDD6682

MOSFET N-CH 30V 75A DPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDD6682 is a 30V N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a low ON-resistance of 6.2mOhm at 17A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 75A (Ta) and a maximum power dissipation of 71W (Ta), it is suitable for demanding power management tasks. The FDD6682 utilizes Fairchild's advanced PowerTrench® technology for optimized performance and reliability. Its TO-252 (DPAK) surface-mount package facilitates integration into compact board designs. Key electrical parameters include a gate charge (Qg) of 31 nC (max) at 5V Vgs and input capacitance (Ciss) of 2400 pF (max) at 15V Vds. This MOSFET is commonly found in power supplies, automotive electronics, and industrial motor control systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Ta)
Rds On (Max) @ Id, Vgs6.2mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)71W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 15 V

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