FDD6680A
MOSFET N-CH 30V 14A/56A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDD6680A is a PowerTrench® N-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and offers a Continuous Drain Current (Id) of 14A at 25°C ambient and 56A at 25°C case temperature. The low on-resistance of 9.5mOhm at 14A and 10V gate drive, with a maximum gate charge of 20 nC at 5V, ensures minimal conduction and switching losses. With a maximum power dissipation of 2.8W (Ta) and 60W (Tc), and an operating temperature range of -55°C to 175°C, the FDD6680A is suitable for demanding environments. The TO-252 (DPAK) surface mount package facilitates integration into compact designs. This component is frequently utilized in power management, automotive systems, and industrial power supplies.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1425 pF @ 15 V |
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