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FDD6680

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FDD6680

MOSFET N-CH 30V 12A/46A DPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor’s FDD6680 is a 30V N-Channel PowerTrench® MOSFET in a TO-252 (DPAK) package. This device offers a continuous drain current of 12A at ambient temperature and 46A at case temperature, with a maximum power dissipation of 3.3W (Ta) and 56W (Tc). Key electrical specifications include a low on-resistance of 10mOhm at 12A and 10V, an input capacitance (Ciss) of 1230pF at 15V, and a gate charge (Qg) of 18nC at 5V. The FDD6680 features a threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. Designed for efficient switching and high current applications, this MOSFET is suitable for use in power management, automotive, and industrial systems. It operates over a temperature range of -55°C to 175°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 15 V

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