FDD6680
MOSFET N-CH 30V 12A/46A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor’s FDD6680 is a 30V N-Channel PowerTrench® MOSFET in a TO-252 (DPAK) package. This device offers a continuous drain current of 12A at ambient temperature and 46A at case temperature, with a maximum power dissipation of 3.3W (Ta) and 56W (Tc). Key electrical specifications include a low on-resistance of 10mOhm at 12A and 10V, an input capacitance (Ciss) of 1230pF at 15V, and a gate charge (Qg) of 18nC at 5V. The FDD6680 features a threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. Designed for efficient switching and high current applications, this MOSFET is suitable for use in power management, automotive, and industrial systems. It operates over a temperature range of -55°C to 175°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 56W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 15 V |
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