FDD6606
MOSFET N-CH 30V 75A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FDD6606 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Ta). Its low on-resistance (Rds On) of 6mOhm at 17A and 10V gate-source voltage (Vgs) ensures efficient power delivery. The FDD6606 offers a maximum power dissipation of 71W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 31 nC at 5V Vgs and input capacitance (Ciss) of 2400 pF at 15V Vds. The TO-252-3, DPAK (SC-63) surface mount package facilitates integration into compact designs. This MOSFET is suitable for use in power management, automotive, and industrial power switching applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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