FDD5N50TM
4A, 500V, 1.4OHM, N-CHANNEL POWEManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FDD5N50TM is an N-Channel Power MOSFET from the PowerTrench® series. This component offers a drain-source voltage of 500V and a continuous drain current of 4A at 25°C (Tc). Featuring a maximum on-resistance of 1.4Ohm at 2A and 10V gate drive, it is designed for efficient power switching applications. The device has a maximum power dissipation of 40W (Tc) and a gate charge of 15 nC at 10V. Packaged in a TO-252 (DPAK) surface-mount configuration, it operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, inverters, and motor control systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
