FDD3580
MOSFET N-CH 80V 7.7A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDD3580 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 7.7A at 25°C ambient. The Rds On is specified at a maximum of 29mOhm at 7.7A and 10V Vgs. Optimized for surface mounting, it comes in a TO-252 (DPAK) package, offering thermal dissipation of 3.8W (Ta) and 42W (Tc). Key parameters include an input capacitance (Ciss) of 1760pF (max) at 40V Vds and a gate charge (Qg) of 49nC (max) at 10V Vgs. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power management, automotive, and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 7.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 40 V |
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