FDD3570
MOSFET N-CH 80V 10A TO252Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDD3570 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 10A at 25°C (Ta). Optimized with a low on-resistance of 20mOhm at 10A and 10V Vgs, it offers minimal conduction losses. The TO-252 (DPAK) surface mount package provides excellent thermal performance, with a maximum power dissipation of 3.4W (Ta) and 69W (Tc). Key parameters include a gate charge (Qg) of 76nC at 10V and input capacitance (Ciss) of 2800pF at 40V. This MOSFET is suitable for use in power management, industrial, and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 40 V |
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