FDD2570
MOSFET N-CH 150V 4.7A TO252Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDD2570 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 4.7A at 25°C. The FDD2570 offers a low on-resistance (Rds On) of 80mOhm maximum at 4.7A and 10V Vgs. With a maximum power dissipation of 3.2W (Ta) and 70W (Tc), this MOSFET is suitable for surface mount configurations within the TO-252 (DPAK) package. Key parameters include a gate charge (Qg) of 62 nC at 10V and input capacitance (Ciss) of 1907 pF at 75V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply units, motor control, and lighting solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1907 pF @ 75 V |
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