FDD14AN06LA0
MOSFET N-CH 60V 9.5A/50A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDD14AN06LA0 is an N-Channel Power MOSFET from the PowerTrench® series, housed in a TO-252 (DPAK) package. This device features a Drain-Source Voltage (Vdss) of 60V and offers a continuous drain current of 9.5A at 25°C ambient and 50A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 11.6mOhm at 50A and 10V. Key specifications include a maximum power dissipation of 125W (Tc) and a gate charge (Qg) of 32 nC at 5V. Input capacitance (Ciss) is rated at 2810 pF maximum at 25V. The operating temperature range is -55°C to 175°C. This component is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |
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