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FDD068AN03L

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FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDD068AN03L is an N-Channel Power MOSFET from the PowerTrench® series. This component features a 30V Drain-to-Source Voltage (Vdss) and supports high continuous drain current capabilities of 17A at ambient temperature and 35A at case temperature. With a maximum power dissipation of 80W at the case temperature, it is designed for efficient thermal management. The device exhibits a low on-resistance (Rds On) of 5.7mOhm at 35A and 10V Vgs. Key characteristics include a gate charge of 60 nC at 10V and input capacitance (Ciss) of 2525 pF at 15V. It is packaged in a TO-252 (DPAK) surface-mount configuration and operates across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for applications in power management, automotive systems, and industrial power supplies.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs5.7mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2525 pF @ 15 V

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