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FDC796N

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FDC796N

MOSFET N-CH 30V 12.5A SUPERSOT6

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDC796N is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 12.5A at 25°C. With a maximum Rds(on) of 9mOhm at 12.5A and 10V Vgs, it offers low conduction losses. The SuperSOT™-6 FLMP package provides a compact footprint and excellent thermal performance, with a maximum power dissipation of 2W. Key electrical characteristics include a gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 1444 pF at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and consumer electronics where efficient power switching is critical.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)
Rds On (Max) @ Id, Vgs9mOhm @ 12.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSuperSOT™-6 FLMP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1444 pF @ 15 V

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