FDC655AN
MOSFET N-CH 30V 6.3A SUPERSOT6Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDC655AN is an N-Channel PowerTrench® MOSFET designed for efficient power management. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 6.3A at 25°C with a maximum power dissipation of 1.6W. The Rds(On) is specified at 27mOhm maximum at 6.3A and 10V Vgs. The MOSFET utilizes Metal Oxide technology and is housed in a SuperSOT™-6 package for surface mounting. Key electrical characteristics include a gate charge (Qg) of 13 nC maximum at 5V Vgs and input capacitance (Ciss) of 830 pF maximum at 15V Vds. It operates across a temperature range of -55°C to 150°C. This component is commonly found in applications within the consumer electronics and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 15 V |
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