FDC633N
MOSFET N-CH 30V 5.2A SUPERSOT6Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's N-Channel MOSFET, part number FDC633N, offers a 30V drain-source voltage and a continuous drain current of 5.2A at 25°C. This device, housed in a SuperSOT™-6 package, features a maximum Rds(on) of 42mOhm at 5.2A and 4.5V Vgs. Key parameters include a gate charge of 16 nC at 4.5V and input capacitance of 538 pF at 10V. With a power dissipation of 1.6W and an operating temperature range of -55°C to 150°C, the FDC633N is suitable for applications in consumer electronics and industrial control systems where efficient power switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 538 pF @ 10 V |
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