FDB8876
MOSFET N-CH 30V 71A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDB8876 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a 30V Drain-Source Voltage (Vdss) and supports a continuous drain current of 71A at 25°C, with a maximum power dissipation of 70W. The device offers a low on-resistance of 8.5mOhm at 40A and 10V Vgs. Key electrical specifications include a gate charge of 45nC at 10V and input capacitance (Ciss) of 1700pF at 15V. Operating across a temperature range of -55°C to 175°C, the FDB8876 is housed in a TO-263 (D2PAK) surface mount package. This MOSFET is suitable for power management solutions in industrial and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |
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