FDB8442
MOSFET N-CH 40V 28A/80A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDB8442 is an N-channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 40V and boasts a continuous drain current capability of 28A at ambient temperature (Ta) and 80A at case temperature (Tc). With a maximum power dissipation of 254W (Tc) and a low on-resistance (Rds On) of 2.9mOhm at 80A and 10V, the FDB8442 is optimized for demanding power conversion circuits.
The MOSFET utilizes advanced PowerTrench® technology to minimize switching losses and conduction losses. Its high gate charge (Qg) of 235 nC at 10V and input capacitance (Ciss) of 12200 pF at 25V are critical parameters for efficient drive circuit design. The FDB8442 is housed in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly and efficient thermal management. Operating temperature ranges from -55°C to 175°C (TJ). This component is widely employed in power supplies, motor control, and automotive applications where robust performance and high current handling are essential.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 254W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 25 V |
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