FDB6670AL
MOSFET N-CH 30V 80A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDB6670AL is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at 25°C. Its low on-resistance (Rds On) of 6.5mOhm at 40A and 10V gate drive, coupled with a maximum power dissipation of 68W (Tc), makes it suitable for demanding power management solutions. The device utilizes a TO-263AB (D2PAK) surface mount package, offering thermal performance benefits. Key electrical characteristics include a gate charge (Qg) of 33 nC at 5V and an input capacitance (Ciss) of 2440 pF at 15V. This MOSFET is utilized in industries such as automotive, industrial power supplies, and telecommunications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2440 pF @ 15 V |
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