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FDB6021P

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FDB6021P

MOSFET P-CH 20V 28A TO263AB

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDB6021P is a P-Channel PowerTrench® MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 28A at 25°C. The Rds On is specified at a maximum of 30mOhm at 14A and 4.5V Vgs. With a maximum power dissipation of 37W (Tc), it is suitable for power management in automotive and industrial sectors. The TO-263-3, D2PAK (2 Leads + Tab) package facilitates surface mounting. Key specifications include a Gate Charge (Qg) of 28 nC at 4.5V and an input capacitance (Ciss) of 1890 pF at 10V. It operates across a wide temperature range of -65°C to 175°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta)
Rds On (Max) @ Id, Vgs30mOhm @ 14A, 4.5V
FET Feature-
Power Dissipation (Max)37W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 10 V

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