FDB5690
MOSFET N-CH 60V 32A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDB5690 is an N-Channel MOSFET from the PowerTrench® series, packaged in a TO-263AB (D2PAK) surface-mount configuration. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 32A at 25°C. The device offers a low ON-resistance (Rds On) of 27mOhm at 16A and 10V Vgs, with a maximum power dissipation of 58W (Tc). Key parameters include a gate charge (Qg) of 33 nC at 10V and input capacitance (Ciss) of 1120 pF at 25V. The FDB5690 is suitable for applications requiring efficient power switching in industries such as industrial automation and power supply design. It operates within a temperature range of -65°C to 175°C (TJ) and supports gate drive voltages from 6V to 10V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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